DME - Danish Micro Engineering A/S

Cracked Semiconductor Structure

Luminescence dependent on wavelength

Image data
Image size:15 x 15 µm
Temperature:Room temperature
Number of points:128 x 128 in x,y; 1024 in Z (Wavelength)
Total data size:33,5 MB
Spatially integrated opt. spectrum:

Simultaneously measured information:

Optical intensity

Topography
Height difference app. 350 nm
Optical spectrum

Displacement of the maximum
Variation app. 4 nm

When a semiconductor structure is scratched, the grid constants are relaxed along the scratch. This leads to a change of the emission wavelength. This effect can easily be observed with the nearfield spectroscope. In the video you can clearly observe the "change" between the layer close to a scratch and the layers further away.

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