Single InGaN Quantum Film on Laterally Overgrown Structure (ELOG)
Luminescence dependent
on wavelength
| Image data | |
| Image size: | 7 x 7 µm |
| Temperature: | App. 50K |
| Number of points: | 256 x 256 in x,y; 1024 in Z (Wavelength) |
| Total data size: | 134 MB |
| Spatially integrated opt. spectrum: |  |
Topography
Height difference app. 1400 nm
A high resolution scan with 256 x 256 points of a structure with a single InGaN quantum film at app. 50K. This is a partial laterally growing structure. Below the strong emission at the tilted crystal facets, you can still see the GaN emission at app. 360 nm. Please note the emissionen at app. 480 nm, which seem to run parallel to dislocations inside the material.