Laterally Grown Gallium-Nitride Structure
Luminescence dependent
on wavelength
| Image
data |
| Image size: | 10 x 10 µm |
| Temperature: | App. 50K |
| Number of points: | 128 x 128 in x,y; 1024 in Z (Wavelength) |
| Total data size: | 33,5 MB |
| Spatially integrated opt. spectrum: |  |
Simultaneously measured
information:
Topography
Height difference app. 300 nm
Peak width
Variation app. 2 nm
Displacement of the maximum
Variation app. 1 nm
The sample consists of
laterally grown layers with low defect density and vertically grown layers with higher defect density.
The defects work
as non radiative recombination centers, resulting in a strongly reduced luminescence around these. In
the SNOM measurement it
can be seen that the laterally grown layers are significantly brighter than the vertically grown layers.
Comparison
with the (simultaneously recorded) topography image to the right shows that groves in the topography
lie exactly in the middle of the laterally grown zones. (see F. Hitzel et al., Appl. Phys. Lett. 82, 4071 (2003) )
In the video it is clearly seen how the structure
information is only visible
for wavelengths within the emission peak. There are no reflections or similar effects that may cause
a signal independent of the wavelength. It is one of the features of nearfield
spectroscopy that through the wavelength sensitivity it is possible to distinguish between noise signals
and real information.