Laterally Grown Indium-Gallium-Nitride Structure
Luminescence dependent on wavelength
| Image data | |
| Image size: | 10 x 10 µm |
| Temperature: | App. 50K |
| Number of points: | 128 x 128 in x,y; 1024 in Z (Wavelength) |
| Total data size: | 33,5 MB |
| Spatially integrated opt. spectrum: |  |
Topography
Height difference app. 500 nm
When growing, Indium-Gallium-Nitride is very sensitive to differences in the topography of the surface. By growing different layers on structured surfaces, it is possible with a SNOM to observe a number of different emission wavelengths.
In the spatially integrated optical spectrum, you can observe an increase of the intensity with longer wavelengths. This is an artifact by generated luminescence in the optics and in the beamsplitter. Since this disturbance is independent of the position on the surface, it is not visible in the optical images.