Blue Shifted InGaN Facets
Luminescence dependent on wavelength
| Image data | |
| Image size: | 15 x 15 µm |
| Temperature: | App. 50K |
| Number of points: | 128 x 128 in x,y; 1024 in Z (Wavelength) |
| Total data size: | 33,5 MB |
| Spatially integrated opt. spectrum:: |  |
Topography
Height difference app. 750 nm
The topography shows that different crystal facets have been developed in the surface of this sample. On this structure were grown InGaN quantum films. If you look at the emission wavelengths of the different areas in the video, it is clearly seen that the tilted crystal facets shows a strongly blue displaced emission (more than 150 meV). This is a hint towards the defect inactivation mechanism in InGaN-LEDs, where tilted facets cause a high energy barrier around each defect. (vgl. A. Hangleiter et al., Phys. Rev. Lett. 95, p. 127402 (2005))